Erbium-implanted silica microsphere laser

نویسندگان

  • J. Kalkman
  • A. Polman
  • Mark. L. Brongersma
چکیده

Spherical silica optical microresonators were doped with erbium ions by ion implantation at energies of 925 keV and 2.05 MeV using a rotating stage. After thermal annealing at 800 C, light was coupled into the microsphere using a tapered optical fiber. An optical quality factor as high as 1.9 · 10 was observed at k = 1450 nm, corresponding to a modal loss of only 0.01 dB/cm. When pumped at 1450 nm, multi-mode lasing around 1570 nm is observed at a threshold between 150 and 250 lW depending on the overlap between mode and Er distribution. This work demonstrates the compatibility of ion implantation and microresonator technology. 2005 Elsevier B.V. All rights reserved. PACS: 42.55.Sa; 42.60.Da; 42.81.Qb; 85.40.Ry

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تاریخ انتشار 2005